TPN4R806PL,L1Q

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See Product Specifications

Mfr. #:

TPN4R806PL,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 60V 72A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPN4R806PL,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPN4R806PL,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	2efc6a9fbf048cfc8c2a25ed88249971
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	e91e72d3600bde06782f2fd772d1c33b
Vgs(th) (Max) @ Id:	283669614ace519f4b9c04b690e997d2
Gate Charge (Qg) (Max) @ Vgs:	adefee2be820ef0364f2851d0e700f1e
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	fdd8317e9e636f06917c96c71d27e180
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	5f987c78c56d7cca405cc53e312a76bc
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	bacc9fa9bdb7845a42587e1a1c0a43a3
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9