TPN8R903NL,LQ

Images are for reference only
See Product Specifications

Mfr. #:

TPN8R903NL,LQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 30V 20A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPN8R903NL,LQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPN8R903NL,LQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	44fb8dcca168a71f877964651b9b44aa
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	07ac0536f500abf5ab1c49c4ca895320
Vgs(th) (Max) @ Id:	21e81f1947254f4df5fa01fc08560fce
Gate Charge (Qg) (Max) @ Vgs:	93a3ce9d0d511f89f93ba362ed882685
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	4664309331dd113f305dcf45328124db
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	730b81e2c055f17dc3e91a7082fd6334
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	bacc9fa9bdb7845a42587e1a1c0a43a3
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9

In Stock: 0

Stock:

0 Can Ship Immediately