TPW1R104PB,L1XHQ

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See Product Specifications

Mfr. #:

TPW1R104PB,L1XHQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 40V 120A 8DSOP

Упаковка:

Tape & Reel (TR)

Datasheet:

TPW1R104PB,L1XHQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPW1R104PB,L1XHQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	8ea4ca5725d23479e993f518885a34f1
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	b02defd1e33584142b8ec2e678bd4b92
Vgs(th) (Max) @ Id:	59779e26b372f7c39b04b4a96765c326
Gate Charge (Qg) (Max) @ Vgs:	88e0a1d425c24accd6c4e93ab921d440
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	74f337e3d41248f9e2a925979fbc7d0d
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	fbaf3d0eeda4cb384bec1e49842dafb2
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	b009cfe3cd8a49ad04b58345ea051141
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9