TPW1R306PL,L1Q

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See Product Specifications

Mfr. #:

TPW1R306PL,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 60V 260A 8DSOP

Упаковка:

Tape & Reel (TR)

Datasheet:

TPW1R306PL,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPW1R306PL,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	f751ab723295a86d1178a7dab2ceabd1
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	998d477375ed128476ab6db3c65181a6
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	6756e6e5d12d7ab8877b1efbaa341905
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	b4b4a1ae36dcbab639c11820037015a4
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	94c1a6b8ce8693649aa52938bba6ae69
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	b009cfe3cd8a49ad04b58345ea051141
Package / Case:	369f3769eeeca8edfced5aeea243bc44