TPWR6003PL,L1Q

Images are for reference only
See Product Specifications

Mfr. #:

TPWR6003PL,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 30V 150A 8DSOP

Упаковка:

Tape & Reel (TR)

Datasheet:

TPWR6003PL,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPWR6003PL,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	cb4e35d815c72bdb05e0db13b2827c5d
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	31d293ce1657787c76612bb8f370a6c6
Vgs(th) (Max) @ Id:	335f69c535d38282d0c930df5ac1d478
Gate Charge (Qg) (Max) @ Vgs:	dd1e01f8f7a1df3b99f0374250edc868
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	c022aa3ad41e5d46719265c18df655b9
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	94c1a6b8ce8693649aa52938bba6ae69
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	b009cfe3cd8a49ad04b58345ea051141
Package / Case:	369f3769eeeca8edfced5aeea243bc44