TPWR8503NL,L1Q

Images are for reference only
See Product Specifications

Mfr. #:

TPWR8503NL,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 30V 150A 8DSOP

Упаковка:

Tape & Reel (TR)

Datasheet:

TPWR8503NL,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPWR8503NL,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	cb4e35d815c72bdb05e0db13b2827c5d
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	0aae3d1e43f43e28f14bca68a35ad12c
Vgs(th) (Max) @ Id:	e27cb9a9021a7cc3970301d6fa06979f
Gate Charge (Qg) (Max) @ Vgs:	915b63e8679a1e11f610de1b838b4444
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	ce4631848b18e74ac382e40da21fc994
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c20f960cc315cc80d889902fea7d55fd
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	b009cfe3cd8a49ad04b58345ea051141
Package / Case:	369f3769eeeca8edfced5aeea243bc44