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See Product Specifications
| номер части: | TW045N120C,S1F |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 9c6688ef624c6423a2454cecdc869df8 |
| Drain to Source Voltage (Vdss): | edca1d2343e4e5615ce51a879f622a76 |
| Current - Continuous Drain (Id) @ 25°C: | 3bea801ada2019f6e4c9b4fd24faaa4c |
| Drive Voltage (Max Rds On, Min Rds On): | 4fe830fc54951fe85de6fed766954259 |
| Rds On (Max) @ Id, Vgs: | 8911d1539901a91065c39f5b77345d5d |
| Vgs(th) (Max) @ Id: | 6b8ab438afc7f3115ff477472382b667 |
| Gate Charge (Qg) (Max) @ Vgs: | 12c9a936c189987465e7dc9586937312 |
| Vgs (Max): | 1d451f433f14e0cd99646c5802738209 |
| Input Capacitance (Ciss) (Max) @ Vds: | 449a68ebda3f4de1fa2a8f27dffc741f |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 03f8deb0def249a260c69289855949b8 |
| Operating Temperature: | a3ecb8c734de728296fa3b72c67bbd58 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | 566bc0f44c33782e0104763798b071ab |
| Package / Case: | 748a8539a6c3c7dbdb455218c72fac40 |
