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See Product Specifications
| номер части: | ULN2803APG,CN |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tube |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | 4a7ace53691a5ab46bb511ab40fca1ce |
| Current - Collector (Ic) (Max): | 5e40585f7a94ee7a97fea0a1b3e43127 |
| Voltage - Collector Emitter Breakdown (Max): | ef3fbc276cb9f08e57f243ec2875d986 |
| Vce Saturation (Max) @ Ib, Ic: | 379fbe062b4c5b292ee1bd0b1e2ddc08 |
| Current - Collector Cutoff (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 16bc532a6e57ec0e24a46ef2c01c5deb |
| Power - Max: | a39b2ca8f727775b84532547bb491fed |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | a0642ad5458e4dac9a3b9b1a9a5604fd |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 35366f984942aaa0074c055de5419b2e |
| Supplier Device Package: | 751b3b0ae6bd8333184eb9a51e6d8201 |
