XK1R9F10QB,LXGQ

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Mfr. #:

XK1R9F10QB,LXGQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 100V 160A TO220SM

Упаковка:

Tape & Reel (TR)

Datasheet:

XK1R9F10QB,LXGQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	XK1R9F10QB,LXGQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	4cc4f68f7010d4ae6edbeba42e79d3ef
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	450846e655ee181023c8ecf887c99c01
Vgs(th) (Max) @ Id:	92e41164c30579f3defe30c91bbd1c8d
Gate Charge (Qg) (Max) @ Vgs:	ed449101f38265f490f6b257c3f7754d
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	f2b2508f621cb2866b59ee1eda100312
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	925b824d4ea9a147ba322c6feb66115c
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	f7944d055bb3cc70853f272a8d27664f
Package / Case:	99446f4470b43888d0c78d7d2cdfc956