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See Product Specifications
| номер части: | XPH4R10ANB,L1XHQ |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | fe19f284a11e381cab3e68436fead637 |
| Drive Voltage (Max Rds On, Min Rds On): | 9271e32297e2bbc49bb4aadcd764fb6f |
| Rds On (Max) @ Id, Vgs: | 8813466c732d9e31b78d013d8144c2e2 |
| Vgs(th) (Max) @ Id: | 92e41164c30579f3defe30c91bbd1c8d |
| Gate Charge (Qg) (Max) @ Vgs: | 4654abfef5e6b00713567f19e88c7a76 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 98b6edb72f4a0d4e546b659919fd3f4b |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 94c1a6b8ce8693649aa52938bba6ae69 |
| Operating Temperature: | a3ecb8c734de728296fa3b72c67bbd58 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 048c7de456f5a46821d2976346ac59b9 |
| Package / Case: | f49da53c8c5540a52c060002bb7baa8e |
