XPH4R714MC,L1XHQ

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See Product Specifications

Mfr. #:

XPH4R714MC,L1XHQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 40V 60A 8SOP

Упаковка:

Tape & Reel (TR)

Datasheet:

XPH4R714MC,L1XHQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	XPH4R714MC,L1XHQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	96cd7767f38099df4a6c066b3b4a102d
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	faeb79830adbf4da55a7898a390e0366
Vgs(th) (Max) @ Id:	335f69c535d38282d0c930df5ac1d478
Gate Charge (Qg) (Max) @ Vgs:	3ac4461161801a3f9c4fe7f568644295
Vgs (Max):	02cc895643c87c92ed1c8005e0d8d38d
Input Capacitance (Ciss) (Max) @ Vds:	d39328e8203d698d14ae2bc09a52b52c
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	fbaf3d0eeda4cb384bec1e49842dafb2
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	048c7de456f5a46821d2976346ac59b9
Package / Case:	f49da53c8c5540a52c060002bb7baa8e