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See Product Specifications
| номер части: | XPW6R30ANB,L1XHQ |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 6e542846a04d1b959ff8a0950ca0905a |
| Drive Voltage (Max Rds On, Min Rds On): | 9271e32297e2bbc49bb4aadcd764fb6f |
| Rds On (Max) @ Id, Vgs: | 2c198b3392679f3ad6fa5a7f78fb62dd |
| Vgs(th) (Max) @ Id: | 2c65de7c887041df4691a3701243f129 |
| Gate Charge (Qg) (Max) @ Vgs: | 4e71bc96f30d54e9842d44bf185090bd |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 5b4bfb763b2a3ca24313ceaaa8a74ad6 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | fbaf3d0eeda4cb384bec1e49842dafb2 |
| Operating Temperature: | a3ecb8c734de728296fa3b72c67bbd58 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | b009cfe3cd8a49ad04b58345ea051141 |
| Package / Case: | 67fd376bd79eda48286f8f6e0131d8c9 |
