XPW6R30ANB,L1XHQ

Images are for reference only
See Product Specifications

Mfr. #:

XPW6R30ANB,L1XHQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 100V 45A 8DSOP

Упаковка:

Tape & Reel (TR)

Datasheet:

XPW6R30ANB,L1XHQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	XPW6R30ANB,L1XHQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	6e542846a04d1b959ff8a0950ca0905a
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	2c198b3392679f3ad6fa5a7f78fb62dd
Vgs(th) (Max) @ Id:	2c65de7c887041df4691a3701243f129
Gate Charge (Qg) (Max) @ Vgs:	4e71bc96f30d54e9842d44bf185090bd
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	5b4bfb763b2a3ca24313ceaaa8a74ad6
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	fbaf3d0eeda4cb384bec1e49842dafb2
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	b009cfe3cd8a49ad04b58345ea051141
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9