UF3C120080B7S

UF3C120080B7S

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UF3C120080B7S
Mfr.:
Описание:
SICFET P-CH 1200V 28.8A D2PAK-7
Упаковка:
Tape & Reel (TR)
Datasheet:
UF3C120080B7S Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:UF3C120080B7S
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:UnitedSiC
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:61f34f0368170df0d8d859a56c260eca
Drain to Source Voltage (Vdss):edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:0b6663c011062d9b4bd618d8a12f2384
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:1fee6f09fff20d3d9a0c35e52ff886ea
Vgs(th) (Max) @ Id:38bc7a388811e30ce35e1e727cb8010e
Gate Charge (Qg) (Max) @ Vgs:18eb01b92ece1343f3a67cdf1b3f35f3
Vgs (Max):fbd977bb3518279a4b9189d4188fb888
Input Capacitance (Ciss) (Max) @ Vds:b30365ef061dfd04777154fbfadd8bc7
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):97cc2010278dae29e0754abe60f0d639
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:ddc47a001e8913f0f8d1fa9d297fdf36
Package / Case:f0141ac7a209283a1eeaae764566c410
In Stock: 1811
Stock:
1811 Can Ship Immediately
  • Делиться:
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