1N5822/54

1N5822/54

Images are for reference only
See Product Specifications

1N5822/54
Описание:
DIODE SCHOTTKY 40V 3A DO201AD
Упаковка:
Tape & Reel (TR)
Datasheet:
1N5822/54 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N5822/54
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):628cbc3e45d5bacb32414a526acf56ef
Current - Average Rectified (Io):657dae0913ee12be6fb2a6f687aae1c7
Voltage - Forward (Vf) (Max) @ If:9ceaca27ca66634c7b99737a17a51459
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:8d9266c3f8b63daa3347be7dd5aa79be
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:3e6133272744ddc764059b0c9b6e5360
Supplier Device Package:770ae6406206d7dd099f2c38b75ee7c7
Operating Temperature - Junction:9f27310f58cdb0789d3b8c4479cfa802
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
RKP350KV#P1
RKP350KV#P1
Renesas Electronics America Inc
DIODE FOR ANTENNA SWITCH
VS-65APF06LHM3
VS-65APF06LHM3
Vishay General Semiconductor - Diodes Division
DIODES - TO-247-E3
VS-40EPS16-M3
VS-40EPS16-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.6KV 40A TO247AC
AIDK16S65C5ATMA1
AIDK16S65C5ATMA1
Infineon Technologies
SIC_DISCRETE PG-TO263-2
S2KW8C-2N
S2KW8C-2N
Semtech Corporation
DIODE GEN PURP 8KV 6A MODULE
HV4
HV4
Diotec Semiconductor
HV Rect., 4000V, 0.200A, 400ns
S5T-CT
S5T-CT
Diotec Semiconductor
CUT-TAPE VERSION. STANDARD RECO
SF20DG-T
SF20DG-T
Diodes Incorporated
DIODE GEN PURP 200V 2A DO15
RGP30GHE3/54
RGP30GHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 3A DO201AD
VS-50WQ04FNPBF
VS-50WQ04FNPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 5.5A DPAK
ES2BAHM2G
ES2BAHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AC
RS1AL MTG
RS1AL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 800MA SUB SMA
Вас также может заинтересовать
P6KE110CAHE3/54
P6KE110CAHE3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 94VWM 152VC DO204AC
SMCJ54CA-M3/57T
SMCJ54CA-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 54VWM 87.1VC DO214AB
SMBJ30-E3/52
SMBJ30-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 30VWM 53.5VC DO214AA
SMA5J20C-E3/61
SMA5J20C-E3/61
Vishay General Semiconductor - Diodes Division
TVS DIODE 20VWM 35.8VC DO214AC
TA6F8.2AHM3/6A
TA6F8.2AHM3/6A
Vishay General Semiconductor - Diodes Division
TVS DIODE 7.02VWM 12.1VC DO221AC
VS-20CTQ040STRRPBF
VS-20CTQ040STRRPBF
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V D2PAK
BAQ333-TR
BAQ333-TR
Vishay General Semiconductor - Diodes Division
DIODE GP 40V 200MA MICROMELF
AR1PD-M3/85A
AR1PD-M3/85A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 1A DO220AA
IRD3910
IRD3910
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 30A DO203AB
EGP50DHE3/73
EGP50DHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 5A GP20
AS4PMHM3/87A
AS4PMHM3/87A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 2.4A TO277
BZG03B51TR3
BZG03B51TR3
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 1.25W DO214AC