1N6482HE3/96

1N6482HE3/96

Images are for reference only
See Product Specifications

1N6482HE3/96
Описание:
DIODE GEN PURP 600V 1A DO213AB
Упаковка:
Tape & Reel (TR)
Datasheet:
1N6482HE3/96 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N6482HE3/96
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:50843c8b4f2ebc6ab98b8d8833a54de0
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:cd08854385deda7826cbcc335b36c2dc
Capacitance @ Vr, F:bb907487740abef6fa72d99a47c7847a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:05bed220910a85a808c08c2c7f212dda
Supplier Device Package:5b38b5d499bdba550f5d4465513f534c
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAS16WE6327
BAS16WE6327
Infineon Technologies
RECTIFIER DIODE, 0.25A, 80V
HSB83JTL
HSB83JTL
Renesas Electronics America Inc
DIODE FOR HIGH VOLTAGE SWITCHING
VS-6EVH06HM3/I
VS-6EVH06HM3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE 600V SLIMDPAK
BR39F_R1_00001
BR39F_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
SVT20120UB_R2_00001
SVT20120UB_R2_00001
Panjit International Inc.
EXTREME LOW VF SCHOTTKY BARRIER
MBRB1645HE3_B/I
MBRB1645HE3_B/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 16A D2PAK
VS-6F100M
VS-6F100M
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 6A DO203AA
A330PB
A330PB
Powerex Inc.
DIODE GEN PURP 1.2KV 1200A DO200
R7222507ASOO
R7222507ASOO
Powerex Inc.
DIODE GP 2.5KV 700A DO200AB
CDBK0520-HF
CDBK0520-HF
Comchip Technology
DIODE SCHOTTKY 20V 500MA SOD123F
SE40PGHM3/87A
SE40PGHM3/87A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 2.4A TO277A
SRA8150 C0G
SRA8150 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 8A TO220AC
Вас также может заинтересовать
P6SMB27CA-M3/52
P6SMB27CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC DO214AA
1.5KE33AHE3_A/C
1.5KE33AHE3_A/C
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC 1.5KE
LCE9.0-E3/54
LCE9.0-E3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 9VWM 16.9VC 1.5KE
P4SMA400A-E3/5A
P4SMA400A-E3/5A
Vishay General Semiconductor - Diodes Division
TVS DIODE 342VWM 548VC DO214AC
P6KA30AHE3/54
P6KA30AHE3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.4VC DO204AC
SMB8J18C-E3/5B
SMB8J18C-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 18VWM 32.2VC DO214AA
TPC15AHM3/86A
TPC15AHM3/86A
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC TO277A
SMAJ75CA001HM3/I
SMAJ75CA001HM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 75VWM 121VC DO214AC
BAQ334-TR3
BAQ334-TR3
Vishay General Semiconductor - Diodes Division
DIODE GP 60V 200MA MICROMELF
AZ23C4V3-HE3-08
AZ23C4V3-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23
BZT52C2V7-E3-08
BZT52C2V7-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.7V 410MW SOD123
BZD27B8V2P-HE3-18
BZD27B8V2P-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 800MW DO219AB