8EWS10S

8EWS10S

Images are for reference only
See Product Specifications

8EWS10S
Описание:
DIODE GEN PURP 1KV 8A DPAK
Упаковка:
Tube
Datasheet:
8EWS10S Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:8EWS10S
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Average Rectified (Io):aef4533582e3b78f1bc369aaf4ae62ba
Voltage - Forward (Vf) (Max) @ If:c861b5210be6b6a8997117f01b10bef7
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:b202a9e9eb58f45d7f2d2bc492eac68e
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
Supplier Device Package:d451cfc219a99288f4998a33a04a4942
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
1N5817-E3/73
1N5817-E3/73
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V 1A DO204AL
PMEG3010EB/S500115
PMEG3010EB/S500115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
VS-20BQ030-M3/5BT
VS-20BQ030-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 2A SMB
PG152R_R2_00001
PG152R_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION FAST S
RGL41JHE3/97
RGL41JHE3/97
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO213AB
RGP15D-E3/54
RGP15D-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1.5A DO204AC
1N5061TAP
1N5061TAP
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 2A SOD57
1N2025
1N2025
Solid State Inc.
DO5 40 AMP SILICON RECTFIER
FES16CTR
FES16CTR
onsemi
DIODE GEN PURP 150V 16A TO220AC
R9G21211CSOO
R9G21211CSOO
Powerex Inc.
DIODE FAST REC R9G 1100A 1200V
UG06B A0G
UG06B A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 600MA TS-1
JANTXV1N3289
JANTXV1N3289
Microchip Technology
ZENER DIODE
Вас также может заинтересовать
P4SMA9.1AHE3_A/H
P4SMA9.1AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 7.78VWM 13.4VC DO214AC
P4SMA510A-M3/61
P4SMA510A-M3/61
Vishay General Semiconductor - Diodes Division
TVS DIODE 434VWM 698VC DO214AC
P6SMB6.8CA-M3/52
P6SMB6.8CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
1.5SMC91CA-M3/9AT
1.5SMC91CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 77.8VWM 125VC SMC
SM6S15-E3/2D
SM6S15-E3/2D
Vishay General Semiconductor - Diodes Division
TVS DIODE 15VWM 26.9VC DO218AB
TPSMP24HM3/84A
TPSMP24HM3/84A
Vishay General Semiconductor - Diodes Division
TVS DIODE 19.4VWM 34.7VC DO220AA
VS-5EWH06FN-M3
VS-5EWH06FN-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 5A D-PAK
BYG22D-M3/TR3
BYG22D-M3/TR3
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 2A DO214AC
FESF16GT-E3/45
FESF16GT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 16A ITO220AC
AS4PDHM3/86A
AS4PDHM3/86A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 2.4A TO277A
VS-30BQ100GTRPBF
VS-30BQ100GTRPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 3.0A SMC
BZT52C68-HE3-08
BZT52C68-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 68V 410MW SOD123