AS1PGHM3/84A

AS1PGHM3/84A

Images are for reference only
See Product Specifications

AS1PGHM3/84A
Описание:
DIODE AVALANCHE 400V 1.5A DO220
Упаковка:
Tape & Reel (TR)
Datasheet:
AS1PGHM3/84A Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:AS1PGHM3/84A
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:e0f9771ae9c968d8de36deb908204d09
Voltage - DC Reverse (Vr) (Max):a51e6c3b115ead349deb13cbf5a43f23
Current - Average Rectified (Io):e6bb0ae5f942ff9879ca4c3f45676057
Voltage - Forward (Vf) (Max) @ If:fd42e83f3cac0ce5cb07391b3949d1c0
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):5b2cc5859de736eab881d5c10e165a40
Current - Reverse Leakage @ Vr:eea8703a936f4d10e45752881a22d5be
Capacitance @ Vr, F:4068d95d11554248b678927be4dc321d
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:75704ab454da2e63b821991f3342e71f
Supplier Device Package:272e34d409432faa3813a986564d10d5
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
1SS367,H3F
1SS367,H3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 10V 100MA SC76
HVB187YP-JTR-E
HVB187YP-JTR-E
Renesas Electronics America Inc
DIODE FOR FREQUENCY ATTENUATOR
BYG24G-E3/TR
BYG24G-E3/TR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 1.5A
EGL41DHE3_A/I
EGL41DHE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO213AB
EM 1YV0
EM 1YV0
Sanken
DIODE GEN PURP 100V 1A AXIAL
S12KC R7G
S12KC R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 12A DO214AB
UFS570J/TR13
UFS570J/TR13
Microchip Technology
DIODE GEN PURP 700V 5A DO214AB
G3S12002H
G3S12002H
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 2A 2-PI
30HFUR-400
30HFUR-400
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 30A DO203AB
EGL34FHE3/98
EGL34FHE3/98
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 500MA DO213
MUR4L40HA0G
MUR4L40HA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO201AD
ES2BAH
ES2BAH
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AC
Вас также может заинтересовать
SMAJ17A-E3/61
SMAJ17A-E3/61
Vishay General Semiconductor - Diodes Division
TVS DIODE 17VWM 27.6VC DO214AC
SMCJ14CAHE3/57T
SMCJ14CAHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 14VWM 23.2VC DO214AB
ICTE10C-E3/51
ICTE10C-E3/51
Vishay General Semiconductor - Diodes Division
TVS DIODE 10VWM 14.5VC 1.5KE
P6SMB27CAHM3/I
P6SMB27CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC DO214AA
SMA5J24CAHM3/H
SMA5J24CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 24VWM 38.9VC DO214AC
VS-VSKD600-08PBF
VS-VSKD600-08PBF
Vishay General Semiconductor - Diodes Division
DIODE GEN 800V 300A MAGNAPAK
SS26HE3_A/H
SS26HE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 2A DO214AA
SS32-E3/57T
SS32-E3/57T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V 3A DO214AB
BY229X-800HE3/45
BY229X-800HE3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 8A ITO220AC
S1GHE3/61T
S1GHE3/61T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO214AC
BZX384C10-E3-18
BZX384C10-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 200MW SOD323
TLZ13A-GS08
TLZ13A-GS08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 500MW SOD80