BYWE29-200-E3/45

BYWE29-200-E3/45

Images are for reference only
See Product Specifications

BYWE29-200-E3/45
Описание:
DIODE GEN PURP 200V 8A TO220AC
Упаковка:
Tube
Datasheet:
BYWE29-200-E3/45 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BYWE29-200-E3/45
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):b86aa01bc1f9484a191794819edcfc06
Current - Average Rectified (Io):aef4533582e3b78f1bc369aaf4ae62ba
Voltage - Forward (Vf) (Max) @ If:2ae72ae1f6ee9635518f58a26c38dd9e
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):a2ae0914ecb8ec833e13c1365b306a6e
Current - Reverse Leakage @ Vr:b74ef6fb4de700e3379a952a2fb629b3
Capacitance @ Vr, F:048615ccfb92bf0fd638bf8a4f3bad46
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:65170ef500fce04c4d928fa302cdc403
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
EGL1M
EGL1M
Diotec Semiconductor
DIODE SFR DO-213AA 1000V 1A
WNSC10650T6J
WNSC10650T6J
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
60S10-TP
60S10-TP
Micro Commercial Co
DIODE GEN PURP 1KV 6A DO201AD
SK55_R1_00001
SK55_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
FR107A-G
FR107A-G
Comchip Technology
RECTIFIER FAST RECOVERY 1000V 1A
1N4936G-T
1N4936G-T
Diodes Incorporated
DIODE GEN PURP 400V 1A DO41
TSP15U120S S1G
TSP15U120S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 120V 15A TO277A
R5020818FSWA
R5020818FSWA
Powerex Inc.
DIODE GEN PURP 800V 175A DO205AA
SF43G A0G
SF43G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 4A DO201AD
HERAF807G C0G
HERAF807G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 8A ITO220AC
SF11G B0G
SF11G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
CS1M-E3/H
CS1M-E3/H
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO214AC
Вас также может заинтересовать
P4KE110CA-E3/73
P4KE110CA-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 94VWM 152VC DO204AL
1.5KA18HE3/54
1.5KA18HE3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 14.5VWM 26.5VC 1.5KA
1.5SMC56CAHM3/H
1.5SMC56CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 47.8VWM 77VC DO214AB
SMCJ15AHM3/H
SMCJ15AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15VWM 24.4VC DO214AB
113MT120KB
113MT120KB
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 3P 1.2KV 110A MTK
IRKD196/08
IRKD196/08
Vishay General Semiconductor - Diodes Division
DIODE MODULE 800V 195A INT-A-PAK
MBRB30H35CTHE3/81
MBRB30H35CTHE3/81
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 35V TO263AB
BAS40-00-HE3-18
BAS40-00-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 200MA SOT23
VS-85HFR80M
VS-85HFR80M
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 85A DO203AB
SMZJ3801BHM3_A/I
SMZJ3801BHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE ZENER 33V 1.5W DO214AA
BZX55F33-TAP
BZX55F33-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 33V 500MW DO35
VS-81RIA80
VS-81RIA80
Vishay General Semiconductor - Diodes Division
SCR 800V 125A TO209AC