EGL34BHE3/83

EGL34BHE3/83

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EGL34BHE3/83
Описание:
DIODE GEN PURP 100V 500MA DO213
Упаковка:
Tape & Reel (TR)
Datasheet:
EGL34BHE3/83 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:EGL34BHE3/83
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):227b5c7c7a2ed2ea3da210ed0860030d
Current - Average Rectified (Io):5e40585f7a94ee7a97fea0a1b3e43127
Voltage - Forward (Vf) (Max) @ If:0af42ef2f25ec415525b8d85a0adebce
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):b0d7994e039b4509c995ea8ecaf1bb5d
Current - Reverse Leakage @ Vr:5b5b451822cc0173087babe6279facc7
Capacitance @ Vr, F:54199f797d0206ff34efb6da346aab13
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:2e83884c8cec65c46eaec4afb082ae6e
Supplier Device Package:3a2510ef1342debce604620d91c14122
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 0
Stock:
0 Can Ship Immediately
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Для использования с
PU4BCH
PU4BCH
Taiwan Semiconductor Corporation
25NS, 4A, 100V, ULTRA FAST RECOV
BAS21_R1_00001
BAS21_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
WNSC201200CWQ
WNSC201200CWQ
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
JANS1N5312UR-1/TR
JANS1N5312UR-1/TR
Microchip Technology
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