GBL08-M3/51

GBL08-M3/51

Images are for reference only
See Product Specifications

GBL08-M3/51
Описание:
BRIDGE RECT 1PHASE 800V 4A GBL
Упаковка:
Tray
Datasheet:
GBL08-M3/51 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GBL08-M3/51
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Bridge Rectifiers
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tray
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:04d59a4f67a72cfc8a6f8046b91ff693
Technology:eb6d8ae6f20283755b339c0dc273988b
Voltage - Peak Reverse (Max):faca79d8bea430c6302af6f2e2f59d12
Current - Average Rectified (Io):84ca31d47822b436e7a9e53e2a08b38a
Voltage - Forward (Vf) (Max) @ If:9a147f5d9bd5b9aa6de111989fb04946
Current - Reverse Leakage @ Vr:8f69ba4025902c0d85e983ab66d2be80
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:eb54dcc958ea0d9b60d1377f70b9def4
Supplier Device Package:96d8e1e8e6e154b36f0428bac90e0aff
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
VS-KBPC610PBF
VS-KBPC610PBF
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 1KV 6A D-72
GBP406
GBP406
Diodes Incorporated
MEDIUM/HIGH POWER BRIDGE GBP TUB
TS50P06G
TS50P06G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 800V 50A TS-6P
BU2006-M3/45
BU2006-M3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 600V 20A BU
RBU603M
RBU603M
Rectron USA
BRIDGE RECT GLASS 200V 6A RBU
D10JB100-B1-0000
D10JB100-B1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 10A JB
DF35NA100-A1-0000
DF35NA100-A1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 35A TSB-5
DF02M/45
DF02M/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 200V 1A DFM
2KBP02M-E4/51
2KBP02M-E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 200V 2A KBPM
DF1501M
DF1501M
Diodes Incorporated
BRIDGE RECT 1PHASE 100V 1.5A DFM
G3SBA20L-M3/51
G3SBA20L-M3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 200V 2.3A GBU
GBU8K-7000M3/45
GBU8K-7000M3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 800V 3.9A GBU
Вас также может заинтересовать
SMBJ20D-M3/I
SMBJ20D-M3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 20VWM 32VC DO214AA
1.5KE120CA-E3/51
1.5KE120CA-E3/51
Vishay General Semiconductor - Diodes Division
TVS DIODE 102VWM 165VC 1.5KE
SM15T24CAHM3_A/I
SM15T24CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
SMA5J6.0CAHE3_A/H
SMA5J6.0CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 6VWM 10.3VC DO214AC
BA782-HE3-18
BA782-HE3-18
Vishay General Semiconductor - Diodes Division
RF DIODE PIN 35V SOD123
VS-UFB170FA60
VS-UFB170FA60
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 94A SOT227
VS-HFA30TA60CSTRLP
VS-HFA30TA60CSTRLP
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 600V 15A D2PAK
RS2J-E3/52T
RS2J-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1.5A DO214AA
ESH1DHM3_A/I
ESH1DHM3_A/I
Vishay General Semiconductor - Diodes Division
1A 200V SM ULTRAFAST RECT SMA
PLZ33B-G3/H
PLZ33B-G3/H
Vishay General Semiconductor - Diodes Division
DIODE ZENER 33V 500MW DO219AC
BZX84B10-G3-18
BZX84B10-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
BZD27C150P-M3-18
BZD27C150P-M3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 150V 800MW DO219AB