GP10-4002-E3S/73

GP10-4002-E3S/73

Images are for reference only
See Product Specifications

GP10-4002-E3S/73
Описание:
DIODE GEN PURP DO204
Упаковка:
Tape & Box (TB)
Datasheet:
GP10-4002-E3S/73 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GP10-4002-E3S/73
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Box (TB)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):227b5c7c7a2ed2ea3da210ed0860030d
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:50843c8b4f2ebc6ab98b8d8833a54de0
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):e2097d323e54168ec5fb162204cbed3e
Current - Reverse Leakage @ Vr:5b5b451822cc0173087babe6279facc7
Capacitance @ Vr, F:bb907487740abef6fa72d99a47c7847a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d91f9d94af13eee9be6db2c0abc9eaa6
Supplier Device Package:7c574f566f70e9e79553d88cc52ad49c
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
STTH208UFY
STTH208UFY
STMicroelectronics
DIODE GEN PURP 800V 2A SMBFLAT
S1Q M3G
S1Q M3G
Taiwan Semiconductor Corporation
1A, 1200V, STANDARD RECOVERY REC
NTE5916
NTE5916
NTE Electronics, Inc
R-200PRV 20A CATH CASE
CDBQC40-HF
CDBQC40-HF
Comchip Technology
DIODE SCHOTTKY 40V 200MA 0402C/S
AU01ZWS
AU01ZWS
Sanken
DIODE GEN PURP 200V 500MA AXIAL
ESH3C-E3/57T
ESH3C-E3/57T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 3A DO214AB
STTH12R06D
STTH12R06D
STMicroelectronics
DIODE GEN PURP 600V 12A TO220AC
JANTX1N1616R
JANTX1N1616R
Microchip Technology
DIODE GEN PURP 600V 15A DO203AA
G3S12015P
G3S12015P
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 2-P
VS-1N3889
VS-1N3889
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 12A DO203AA
SFT11G
SFT11G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A TS-1
SF63GH
SF63GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 6A 150V DO-201AD
Вас также может заинтересовать
1.5SMC33CA-M3/57T
1.5SMC33CA-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC SMC
SMCG7.5AHE3/57T
SMCG7.5AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 7.5VWM 12.9VC DO215AB
P6KE24C-E3/73
P6KE24C-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 19.4VWM 34.7VC DO204AC
VS-113MT160KPBF
VS-113MT160KPBF
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 3P 1.6KV 110A MT-K
VSIB1560-E3/45
VSIB1560-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 600V 3.5A GSIB-5S
GBLA02-M3/45
GBLA02-M3/45
Vishay General Semiconductor - Diodes Division
DIODE BRIDGE 200V GBL
VS-12CTQ035-N3
VS-12CTQ035-N3
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 35V TO220-3
BYG10K-E3/TR3
BYG10K-E3/TR3
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 1.5A
AU1PK-M3/84A
AU1PK-M3/84A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 1A DO220AA
VS-8EWH06FNHM3
VS-8EWH06FNHM3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO252
BZX84C3V3-G3-08
BZX84C3V3-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
VS-ST1200C16K0P
VS-ST1200C16K0P
Vishay General Semiconductor - Diodes Division
SCR 1.6KV 3080A A24