GP10B-4002EHE3/54

GP10B-4002EHE3/54

Images are for reference only
See Product Specifications

GP10B-4002EHE3/54
Описание:
DIODE GEN PURP 100V 1A DO204AL
Упаковка:
Tape & Reel (TR)
Datasheet:
GP10B-4002EHE3/54 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GP10B-4002EHE3/54
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):227b5c7c7a2ed2ea3da210ed0860030d
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:336d5ebc5436534e61d16e63ddfca327
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:336d5ebc5436534e61d16e63ddfca327
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d91f9d94af13eee9be6db2c0abc9eaa6
Supplier Device Package:7c574f566f70e9e79553d88cc52ad49c
Operating Temperature - Junction:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
FESF8JT-E3/45
FESF8JT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A ITO220AC
1N5554US
1N5554US
Microchip Technology
DIODE GEN PURP 1KV 3A B-MELF
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
SS3P6LHM3_A/H
SS3P6LHM3_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 3A TO277A
SR210
SR210
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 2A DO204AC
1N649UR-1
1N649UR-1
Microchip Technology
DIODE GEN PURP 600V 400MA DO213
1N4385GPHE3/54
1N4385GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC
SS13HE3/5AT
SS13HE3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 1A DO214AC
VS-1N5819TR
VS-1N5819TR
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A DO204AL
SS29L MHG
SS29L MHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 2A SUB SMA
S2DHR5G
S2DHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
MER2DAFC-AU_R1_007A1
MER2DAFC-AU_R1_007A1
Panjit International Inc.
200V,SUPER FAST RECOVERY RECTIFI
Вас также может заинтересовать
SMF12A-HE3-18
SMF12A-HE3-18
Vishay General Semiconductor - Diodes Division
TVS DIODE 12VWM 19.9VC SMF
TMPG06-33A-E3/73
TMPG06-33A-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC MPG06
P6SMB100AHE3/5B
P6SMB100AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AA
SMCJ26CHE3/9AT
SMCJ26CHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 26VWM 46.6VC DO214AB
VS-E5TH0812-M3
VS-E5TH0812-M3
Vishay General Semiconductor - Diodes Division
8A, 1200V, "H" SERIES FRED PT IN
VS-ETX1506-1-M3
VS-ETX1506-1-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 15A TO262
AZ23C3V9-E3-18
AZ23C3V9-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23
BZX84B30-G3-08
BZX84B30-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3
BZD27B27P-M3-18
BZD27B27P-M3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 800MW DO219AB
MMBZ5226C-HE3-08
MMBZ5226C-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 225MW SOT23-3
MMBZ5247B-HE3-08
MMBZ5247B-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 17V 225MW SOT23-3
VS-P405KW
VS-P405KW
Vishay General Semiconductor - Diodes Division
SCR HY-BRIDGE 1200V 40A PACE-PAK