GP10M-4007E-M3/73

GP10M-4007E-M3/73

Images are for reference only
See Product Specifications

GP10M-4007E-M3/73
Описание:
DIODE GEN PURP 1KV 1A DO204AL
Упаковка:
Tape & Box (TB)
Datasheet:
GP10M-4007E-M3/73 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GP10M-4007E-M3/73
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Box (TB)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:f03f39ff8ceca4763d1520cdfb28b301
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):e2097d323e54168ec5fb162204cbed3e
Current - Reverse Leakage @ Vr:8a1d5eea97004a30dd1d92e5ce42b11e
Capacitance @ Vr, F:54199f797d0206ff34efb6da346aab13
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d91f9d94af13eee9be6db2c0abc9eaa6
Supplier Device Package:7c574f566f70e9e79553d88cc52ad49c
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
ES1F
ES1F
onsemi
DIODE GEN PURP 300V 1A SMA
BYV26D-TR
BYV26D-TR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 1A SOD57
SR203-TP
SR203-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 2A DO41
HS5K V7G
HS5K V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 5A DO214AB
SK110B R5G
SK110B R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A DO214AA
V35PW45-M3/I
V35PW45-M3/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 35A SLIMDPAK
V1FM12HM3/H
V1FM12HM3/H
Vishay General Semiconductor - Diodes Division
1A 120V SMF TRENCH SKY RECT
NRVB830MFST1G
NRVB830MFST1G
onsemi
DIODE SCHOTTKY 30V 8A 5DFN
SL42HE3_B/I
SL42HE3_B/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V 4A DO214AB
UES1305SM
UES1305SM
Microchip Technology
RECTIFIER
S10GC M6G
S10GC M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 10A DO214AB
NUR460/L01,112
NUR460/L01,112
NXP USA Inc.
DIODE GEN PURP 600V 4A DO201AD
Вас также может заинтересовать
SM15T10A-E3/57T
SM15T10A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AB
SMAJ16A-M3/5A
SMAJ16A-M3/5A
Vishay General Semiconductor - Diodes Division
TVS DIODE 16VWM 26VC DO214AC
5KP130A-E3/73
5KP130A-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 130VWM 209VC P600
SA28CHE3/54
SA28CHE3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 28VWM 50.1VC DO204AC
SMBG9.0HE3/5B
SMBG9.0HE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 9VWM 16.9VC DO215AA
SMBJ60-E3/5B
SMBJ60-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 60VWM 107VC DO214AA
TPSMB24AHE3/52T
TPSMB24AHE3/52T
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
P4SMA68CAHM3/I
P4SMA68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AC
VSIB620-E3/45
VSIB620-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 200V 2.8A GSIB-5S
30CTQ060STRR
30CTQ060STRR
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 60V D2PAK
NSB8DTHE3_B/I
NSB8DTHE3_B/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO263AB
TZM5233C-GS08
TZM5233C-GS08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6V 500MW SOD80