LL103C-7

LL103C-7

Images are for reference only
See Product Specifications

LL103C-7
Описание:
DIODE SCHOTTKY 20V 200MA SOD80
Упаковка:
Tape & Reel (TR)
Datasheet:
LL103C-7 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:LL103C-7
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Average Rectified (Io):696e934ee0aa892c4c08deb2776f2650
Voltage - Forward (Vf) (Max) @ If:40494fc60759d307e6997e435f468928
Speed:a0189688e63fa3c4576aed928f6b00f7
Reverse Recovery Time (trr):b5545c5fb7e6db605b198c02a91467a5
Current - Reverse Leakage @ Vr:29954d3a98f9027f6c14f0a0b8e0ce7b
Capacitance @ Vr, F:4f541c103e18a3662abdd19c6e7d14ef
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:8acdbf799d0f4ebc7bdf077553fca1d5
Supplier Device Package:8b62110fd8c13d728605e74bfb7f9f09
Operating Temperature - Junction:86647346b14bcada816e001402d83205
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
PMBD6050,215
PMBD6050,215
Nexperia USA Inc.
DIODE GEN PURP 70V 215MA TO236AB
CRG07(TE85L,Q,M)
CRG07(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 700MA S-FLAT
1N5402-G
1N5402-G
Comchip Technology
DIODE GEN PURP 200V 3A DO201AD
S8CGHM3/I
S8CGHM3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 8A DO214AB
QH08BZ600
QH08BZ600
Power Integrations
DIODE GEN PURP 600V 8A TO263AB
VS-SD403C08S10C
VS-SD403C08S10C
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 430A DO200AA
BYP25A2
BYP25A2
Diotec Semiconductor
ST Rect, 200V, 25A
SB340/4
SB340/4
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 3A DO201AD
1N4005GL-T
1N4005GL-T
Diodes Incorporated
DIODE GEN PURP 600V 1A DO41
S3BHR7G
S3BHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
RS3A R6G
RS3A R6G
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
MSASC75W15FV/TR
MSASC75W15FV/TR
Microchip Technology
POWER SCHOTTKY
Вас также может заинтересовать
P6SMB20CAHM3_A/H
P6SMB20CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 17.1VWM 27.7VC DO214AA
SA58HE3/54
SA58HE3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 58VWM 103VC DO204AC
SMBJ120HE3/52
SMBJ120HE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 120VWM 214VC DO214AA
SM6T6V8AHM3/H
SM6T6V8AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
G2SB60L-5751M3/45
G2SB60L-5751M3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 1.5A GBL
BA782S-HE3-18
BA782S-HE3-18
Vishay General Semiconductor - Diodes Division
RF DIODE PIN 35V SOD323
BA979S-GS08
BA979S-GS08
Vishay General Semiconductor - Diodes Division
DIODE PIN 30V SOD80 QUADROMELF
SS210HE3_A/H
SS210HE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 1.5A DO214AA
VS-309URA250
VS-309URA250
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 2.5KV 300A DO9
AZ23B10-HE3-18
AZ23B10-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23
BZT52C2V4-E3-18
BZT52C2V4-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 410MW SOD123
BZT52B30-G3-08
BZT52B30-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 410MW SOD123