MBR7H50-E3/45

MBR7H50-E3/45

Images are for reference only
See Product Specifications

MBR7H50-E3/45
Описание:
DIODE SCHOTTKY TO-220AC
Упаковка:
Tube
Datasheet:
MBR7H50-E3/45 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MBR7H50-E3/45
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:336d5ebc5436534e61d16e63ddfca327
Voltage - DC Reverse (Vr) (Max):336d5ebc5436534e61d16e63ddfca327
Current - Average Rectified (Io):336d5ebc5436534e61d16e63ddfca327
Voltage - Forward (Vf) (Max) @ If:336d5ebc5436534e61d16e63ddfca327
Speed:336d5ebc5436534e61d16e63ddfca327
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:336d5ebc5436534e61d16e63ddfca327
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
Operating Temperature - Junction:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAS21H,115
BAS21H,115
Nexperia USA Inc.
DIODE GP 200V 200MA SOD123F
1N5626
1N5626
NTE Electronics, Inc
R-600 PRV 3A
SK3C0C
SK3C0C
SURGE
3A -200V - SMC (DO-214AB) - RECT
S2GGF_R1_00001
S2GGF_R1_00001
Panjit International Inc.
SURFACE MOUNT RECTIFIER
SS1H10HM3_B/I
SS1H10HM3_B/I
Vishay General Semiconductor - Diodes Division
1A 100V HIGH BARRIER SKY RECT. S
S2DHE3_A/H
S2DHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1.5A DO214AA
STR5100AFC_R1_00701
STR5100AFC_R1_00701
Panjit International Inc.
100V ,SCHOTTKY,SMAF-C,5A
CMS14(TE12L,Q,M)
CMS14(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 60V 2A MFLAT
SGL41-50HE3/97
SGL41-50HE3/97
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 1A DO213AB
UTR4305
UTR4305
Microchip Technology
UFR,FRR
UFR7120
UFR7120
Microchip Technology
UFR,FRR
SIDC30D120H8X1SA4
SIDC30D120H8X1SA4
Infineon Technologies
DIODE GEN PURP 1.2KV 50A WAFER
Вас также может заинтересовать
VESD03C1-HD1-G3-08
VESD03C1-HD1-G3-08
Vishay General Semiconductor - Diodes Division
3V;IR=20UA;IP=11.6A;P=W;CD=135PF
SMPC48ANHM3/I
SMPC48ANHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 48VWM 77.4VC TO277A
P6SMB10CAHE3/5B
P6SMB10CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.55VWM 14.5VC DO214AA
SMCJ160AHE3/9AT
SMCJ160AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 160VWM 259VC DO214AB
SS3P6-M3/85A
SS3P6-M3/85A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 3A DO220AA
UG4C-E3/54
UG4C-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 4A DO201AD
GP10-4004E-E3/73
GP10-4004E-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
SS32HE3/57T
SS32HE3/57T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V 3A DO214AB
UH1B-M3/5AT
UH1B-M3/5AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1A SMA
BZT52C43-E3-18
BZT52C43-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 43V 410MW SOD123
MMSZ5230B-G3-18
MMSZ5230B-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 500MW SOD123
MMBZ4706-E3-18
MMBZ4706-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 19V 350MW SOT23-3