NS8JTHE3_A/P

NS8JTHE3_A/P

Images are for reference only
See Product Specifications

NS8JTHE3_A/P
Описание:
DIODE GEN PURP 600V 8A TO220AC
Упаковка:
Tube
Datasheet:
NS8JTHE3_A/P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NS8JTHE3_A/P
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):aef4533582e3b78f1bc369aaf4ae62ba
Voltage - Forward (Vf) (Max) @ If:c861b5210be6b6a8997117f01b10bef7
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:cd08854385deda7826cbcc335b36c2dc
Capacitance @ Vr, F:b903f8979a3b65d69290043a7728e24c
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
1N4151W-E3-18
1N4151W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 150MA SOD123
BAV19W RHG
BAV19W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD123
BYG10JHM3_A/I
BYG10JHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1.5A DO214
UPS190E3/TR7
UPS190E3/TR7
Microchip Technology
DIODE SCHOTTKY 1A 90V POWERMITE
1N5806E3
1N5806E3
Microchip Technology
RECTIFIER UFR,FRR
1N1125
1N1125
Microchip Technology
STANDARD RECTIFIER
JANTX1N3766R
JANTX1N3766R
Microchip Technology
DIODE GEN PURP 800V 35A DO203AB
JANTXV1N6942UTK3/TR
JANTXV1N6942UTK3/TR
Microchip Technology
POWER SCHOTTKY
PR1002GL-T
PR1002GL-T
Diodes Incorporated
DIODE GEN PURP 100V 1A DO41
VSB20L45-M3/73
VSB20L45-M3/73
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 6.5A P600
SS13L MTG
SS13L MTG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A SUB SMA
MBRS3100T3H
MBRS3100T3H
onsemi
DIODE SCHOTTKY
Вас также может заинтересовать
SMBJ17A-M3/52
SMBJ17A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 17VWM 27.6VC DO214AA
1.5KE75CHE3/54
1.5KE75CHE3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 60.7VWM 109VC 1.5KE
P4SMA180CAHE3/61
P4SMA180CAHE3/61
Vishay General Semiconductor - Diodes Division
TVS DIODE 154VWM 246VC DO214AC
KBP10M-E4/45
KBP10M-E4/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 1KV 1.5A KBPM
BA783-HG3-08
BA783-HG3-08
Vishay General Semiconductor - Diodes Division
RF DIODE PIN 35V SOD123
BAT54C-G3-08
BAT54C-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
V10D60CHM3_A/I
V10D60CHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 60V TO263AC
RS1PDHM3_A/I
RS1PDHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE 100V 1A DO-220AA
SRP100D-E3/54
SRP100D-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
UH6PJ-M3/86A
UH6PJ-M3/86A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 6A TO277A
BZX384C9V1-G3-08
BZX384C9V1-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 9.1V 200MW SOD323
VLZ6V8C-GS08
VLZ6V8C-GS08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.84V 500MW SOD80