RGP10BEHE3/53

RGP10BEHE3/53

Images are for reference only
See Product Specifications

RGP10BEHE3/53
Описание:
DIODE GEN PURP 100V 1A DO204AL
Упаковка:
Tape & Box (TB)
Datasheet:
RGP10BEHE3/53 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RGP10BEHE3/53
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Box (TB)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):227b5c7c7a2ed2ea3da210ed0860030d
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:a0e62b4b22ccb3a4c48b0174e3affb17
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):6683e8853aa8e3d8e5c53126bfd7d30e
Current - Reverse Leakage @ Vr:5b5b451822cc0173087babe6279facc7
Capacitance @ Vr, F:27522d49b761171178b4cffe18b14a32
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d91f9d94af13eee9be6db2c0abc9eaa6
Supplier Device Package:7c574f566f70e9e79553d88cc52ad49c
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BYG22B-E3/TR
BYG22B-E3/TR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 100V 2A DO214AC
QH12TZ600Q
QH12TZ600Q
Power Integrations
AEC-Q101 600V 12A H SERIES
UG06CH
UG06CH
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 600MA TS-1
CMS08(TE12L,Q,M)
CMS08(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A M-FLAT
JAN1N5617US
JAN1N5617US
Microchip Technology
DIODE GEN PURP 400V 1A D5A
VS-30BQ100TRPBF
VS-30BQ100TRPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 3A SMC
MBR1660HE3/45
MBR1660HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 16A TO220AB
SB10-03A2-BT
SB10-03A2-BT
onsemi
DIODE SCHOTTKY 30V 1A DO41
JANTXV1N6765
JANTXV1N6765
Microchip Technology
RECTIFIER
1A3-TP
1A3-TP
Micro Commercial Co
DIODE GEN PURP 200V 1A R-1
SIMLR2G
SIMLR2G
Taiwan Semiconductor Corporation
GLASS PASSIVATED SMD RECTIFIER
RBR2MM30BTR
RBR2MM30BTR
Rohm Semiconductor
DIODE SCHOTTKY 30V 2A PMDU
Вас также может заинтересовать
GSOT04-HG3-08
GSOT04-HG3-08
Vishay General Semiconductor - Diodes Division
TVS DIODE 4VWM 14.3VC SOT23
P4SMA62CAHM3_A/I
P4SMA62CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 53VWM 85VC DO214AC
5KP170A-E3/51
5KP170A-E3/51
Vishay General Semiconductor - Diodes Division
TVS DIODE 170VWM 275VC P600
5KP18HE3/73
5KP18HE3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 18VWM 32.2VC P600
TMPG06-24AHE3/73
TMPG06-24AHE3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC MPG06
SM6S28A-E3/2D
SM6S28A-E3/2D
Vishay General Semiconductor - Diodes Division
TVS DIODE 28VWM 45.4VC DO218AB
SMB8J14C-E3/52
SMB8J14C-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 14VWM 25.8VC DO214AA
2KBP08M-23E4/51
2KBP08M-23E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 800V 2A KBPM
S1FLM-M-18
S1FLM-M-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO219AB
BYG20GHE3_A/H
BYG20GHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 1.5A DO214
TZX10C-TAP
TZX10C-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 500MW DO35
SMPZ3931B-M3/85A
SMPZ3931B-M3/85A
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 500MW DO220AA