RS2DHE3/52T

RS2DHE3/52T

Images are for reference only
See Product Specifications

RS2DHE3/52T
Описание:
DIODE GEN PURP 200V 1.5A DO214AA
Упаковка:
Tape & Reel (TR)
Datasheet:
RS2DHE3/52T Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RS2DHE3/52T
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:ccbd814be8d73616679e7f5a64ce1cee
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):b86aa01bc1f9484a191794819edcfc06
Current - Average Rectified (Io):c17ecb92d2a18ce25e78874e20fe4ab5
Voltage - Forward (Vf) (Max) @ If:244f54d55ab32276c117987c5c410364
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):6683e8853aa8e3d8e5c53126bfd7d30e
Current - Reverse Leakage @ Vr:f09d9fa82484a18e018c4f4aa84cdd0b
Capacitance @ Vr, F:01f46cbfc6091c6578b8e77fd9fce1ab
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:38894d8db4510f24855cf840455e79c1
Supplier Device Package:72e4d1a9d43a02dd516a7a09297fded3
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
PMEG100T080ELPEZ
PMEG100T080ELPEZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15B
SN13
SN13
EIC SEMICONDUCTOR INC.
REC 1 A, CASE TYPE SMA
MMDL770T1G
MMDL770T1G
onsemi
DIODE SCHOTTKY 70V SOD323
1N6098
1N6098
GeneSiC Semiconductor
DIODE SCHOTTKY 40V 50A DO5
S2JHE3-LTP
S2JHE3-LTP
Micro Commercial Co
2A SILICON RECTIFIER,SMB
SR204 A0G
SR204 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 2A DO204AC
HS1J R3G
HS1J R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AC
10A01-TP
10A01-TP
Micro Commercial Co
DIODE GEN PURP 50V 10A R-6
VS-1N2129A
VS-1N2129A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 60A DO203AB
ES3A R6G
ES3A R6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
GS1AE-TPS05
GS1AE-TPS05
Micro Commercial Co
DIODE GEN PURP 1A DO214AC
SCS304AHGC9
SCS304AHGC9
Rohm Semiconductor
SHORTER RECOVERY TIME, ENABLING
Вас также может заинтересовать
SMAJ6.0CA-E3/61
SMAJ6.0CA-E3/61
Vishay General Semiconductor - Diodes Division
TVS DIODE 6VWM 10.3VC DO214AC
SMBJ14AHE3_A/H
SMBJ14AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 14VWM 23.2VC DO214AA
SMBJ18AHM3_A/I
SMBJ18AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18VWM 29.2VC DO214AA
SM15T150CAHE3_A/H
SM15T150CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AB
BZW04P376B-E3/54
BZW04P376B-E3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 376VWM 603VC DO204AL
BA679-M-08
BA679-M-08
Vishay General Semiconductor - Diodes Division
RF DIODE PIN 30V SOD80 MINIMELF
VS-80APF12-M3
VS-80APF12-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 80A TO247AC
RGP30KHE3/54
RGP30KHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 3A DO201AD
AZ23C15-E3-18
AZ23C15-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 300MW SOT23
BZX84B27-HE3-08
BZX84B27-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 300MW SOT23-3
BZT52B33-E3-18
BZT52B33-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 33V 410MW SOD123
VS-GB75SA120UP
VS-GB75SA120UP
Vishay General Semiconductor - Diodes Division
IGBT MODULE 1200V 658W SOT227