SE10FJHM3/H

SE10FJHM3/H

Images are for reference only
See Product Specifications

SE10FJHM3/H
Описание:
DIODE GEN PURP 600V 1A DO219AB
Упаковка:
Tape & Reel (TR)
Datasheet:
SE10FJHM3/H Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SE10FJHM3/H
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:a16666630877df47662cb06f9ff6fc3a
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):212f18549991be3559538c74ef471ca7
Current - Reverse Leakage @ Vr:5243b74233e3fb81c5f48331c25440a5
Capacitance @ Vr, F:dacc9576f27e53f4b1cd1218cf02028d
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:d1f1d2deb5140ad12942a071381f1ecd
Supplier Device Package:14e4233bf260ed940e2c2faa18cfbb5c
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BYW27-600
BYW27-600
Diotec Semiconductor
DIODE STD DO-41 600V 1A
F1200D
F1200D
Diotec Semiconductor
DIODE FR D8X7.5 200V 12A
1PS76SB10,115
1PS76SB10,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 200MA SOD323
JANTXV1N5417/TR
JANTXV1N5417/TR
Microchip Technology
RECTIFIER UFR,FRR
JANTXV1N5552US.TR
JANTXV1N5552US.TR
Semtech Corporation
D 3A STD 600V HR SM TR
R9G01212XX
R9G01212XX
Powerex Inc.
DIODE GP 1.2KV 1200A DO200AB
FH4
FH4
SURGE
1A -400V - ESGA - RECTIFIER
S3KSMB-CT
S3KSMB-CT
Diotec Semiconductor
CUT-TAPE VERSION. STANDARD RECO
SS2PH10HM3/84A
SS2PH10HM3/84A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 2A DO220AA
GP10-4003EHM3/54
GP10-4003EHM3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
HS5K M6
HS5K M6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
RS3M M6
RS3M M6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
Вас также может заинтересовать
TPSMA15AHE3_B/I
TPSMA15AHE3_B/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AC
SMBJ36AHM3_A/I
SMBJ36AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 36VWM 58.1VC DO214AA
TGL41-75A-E3/96
TGL41-75A-E3/96
Vishay General Semiconductor - Diodes Division
TVS DIODE 64.1VWM 103VC GL41
ICTE5HE3_A/D
ICTE5HE3_A/D
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 7.5VC 1.5KE
P4KE120HE3/54
P4KE120HE3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 97.2VWM 173VC DO204AL
3KASMC10AHM3_A/H
3KASMC10AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10VWM 17VC DO214AB
BU1008A-M3/51
BU1008A-M3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 800V 10A BU
3N249-E4/72
3N249-E4/72
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 400V 1.5A KBPM
VS-30CTQ100GSTRRP
VS-30CTQ100GSTRRP
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V D2PAK
GP10ME-E3/53
GP10ME-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
PLZ6V8B-HG3_A/H
PLZ6V8B-HG3_A/H
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.66V 960MW DO219AC
1N5224B-TAP
1N5224B-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.8V 500MW DO35