SS1P4-E3/85A

SS1P4-E3/85A

Images are for reference only
See Product Specifications

SS1P4-E3/85A
Описание:
DIODE SCHOTTKY 40V 1A DO220AA
Упаковка:
Tape & Reel (TR)
Datasheet:
SS1P4-E3/85A Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SS1P4-E3/85A
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):628cbc3e45d5bacb32414a526acf56ef
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:e0d672557931c7107609a52de62cd3bd
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:97610dd5feb4ed398c9a0122be9bfe15
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:75704ab454da2e63b821991f3342e71f
Supplier Device Package:272e34d409432faa3813a986564d10d5
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
NTE116
NTE116
NTE Electronics, Inc
R-SI 600V 1A
P3D06006G2
P3D06006G2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 6A TO263-2
HS1K R3G
HS1K R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO214AC
STTH8S06B-TR
STTH8S06B-TR
STMicroelectronics
DIODE GEN PURP 600V 8A DPAK
CD6858
CD6858
Microchip Technology
DIODE SMALL-SIGNAL SCHOTTKY
G5S06505AT
G5S06505AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 5A 2-PIN
R6101025XXYZ
R6101025XXYZ
Powerex Inc.
DIODE GEN PURP 1KV 250A DO205
NRVBM110LT3G
NRVBM110LT3G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
SRT15HR0G
SRT15HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 1A TS-1
SIDC26D60C8X1SA1
SIDC26D60C8X1SA1
Infineon Technologies
DIODE GEN PURP 600V 100A WAFER
LL4002G L0G
LL4002G L0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A MELF
CRG04A,LQ(M
CRG04A,LQ(M
Toshiba Semiconductor and Storage
MOSFET N-CH
Вас также может заинтересовать
SMBJ12CAHM3_A/H
SMBJ12CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 12VWM 19.9VC DO214AA
1.5SMC36CA-M3/9AT
1.5SMC36CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC SMC
SMBJ36-E3/52
SMBJ36-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 36VWM 64.3VC DO214AA
SMBJ6.5CAHM3/H
SMBJ6.5CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.5VWM 11.2VC DO214AA
W06G-E4/51
W06G-E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 1.5A WOG
VS-30WQ10FN-M3
VS-30WQ10FN-M3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY DPAK
SD101CW-E3-08
SD101CW-E3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 30MA SOD123
1N6483HE3/96
1N6483HE3/96
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO213AB
VS-88HFR60
VS-88HFR60
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 85A DO203AB
1N4934GPEHE3/54
1N4934GPEHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
EGP30C-E3/54
EGP30C-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 3A GP20
BZD27B11P-E3-18
BZD27B11P-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 800MW DO219AB