UGB8BTHE3_A/P

UGB8BTHE3_A/P

Images are for reference only
See Product Specifications

UGB8BTHE3_A/P
Описание:
DIODE GEN PURP 100V 8A TO263AB
Упаковка:
Tube
Datasheet:
UGB8BTHE3_A/P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:UGB8BTHE3_A/P
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):227b5c7c7a2ed2ea3da210ed0860030d
Current - Average Rectified (Io):aef4533582e3b78f1bc369aaf4ae62ba
Voltage - Forward (Vf) (Max) @ If:491b1b8bdc1b0f93f77f605cd5d365b1
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):c3a09bb11fbb1b8f3c0d89a12782b1da
Current - Reverse Leakage @ Vr:156ca8cb21560d63228b4023a7ce3dee
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:99446f4470b43888d0c78d7d2cdfc956
Supplier Device Package:c1651030b5e959c4697991550f73f503
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
1SS321,LF
1SS321,LF
Toshiba Semiconductor and Storage
SMALL SIGNAL SCHOTTKY BARRIER DI
BD5200YS_S2_00001
BD5200YS_S2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
SS34L
SS34L
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A SUB SMA
STTH3R02QRL
STTH3R02QRL
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
1N4007-AP
1N4007-AP
Micro Commercial Co
1A 1000V STANDARD RECOVERY RECTI
1N6857-1
1N6857-1
Microchip Technology
SCHOTTKY RECTIFIER
1N6651
1N6651
Microchip Technology
RECTIFIER DIODE
JANS1N5711-1
JANS1N5711-1
Microchip Technology
SMALL-SIGNAL SCHOTTKY
SB350
SB350
Fairchild Semiconductor
RECTIFIER DIODE, SCHOTTKY, 3A, 5
S8K
S8K
Diotec Semiconductor
ST Rect, 800V, 8A
SS3P3LHM3/86A
SS3P3LHM3/86A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 3A TO277A
UF4007 R1G
UF4007 R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
Вас также может заинтересовать
TMPG06-39AHE3_A/D
TMPG06-39AHE3_A/D
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC MPG06
SMCJ51A-E3/9AT
SMCJ51A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 51VWM 82.4VC DO214AB
SM5S33HE3/2D
SM5S33HE3/2D
Vishay General Semiconductor - Diodes Division
TVS DIODE 33VWM 59VC DO218AB
SMA5J9.0AHM3_A/I
SMA5J9.0AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 9VWM 15.4VC DO214AC
VS-400U80D
VS-400U80D
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 400A DO205AB
P600M-E3/54
P600M-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 6A P600
IMBD4448-G3-18
IMBD4448-G3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
1N4948GP/54
1N4948GP/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
VS-301URA120
VS-301URA120
Vishay General Semiconductor - Diodes Division
DIODE GP 1.2KV 330A DO205AB
RGF1KHE3_A/H
RGF1KHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE 800V SMD
TLZ2V4B-GS18
TLZ2V4B-GS18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 500MW SOD80
VS-ST083S08PFM1P
VS-ST083S08PFM1P
Vishay General Semiconductor - Diodes Division
SCR 800V 135A TO209AC