US1G-M3/5AT

US1G-M3/5AT

Images are for reference only
See Product Specifications

US1G-M3/5AT
Описание:
DIODE GEN PURP 400V 1A DO214AC
Упаковка:
Tape & Reel (TR)
Datasheet:
US1G-M3/5AT Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:US1G-M3/5AT
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):a51e6c3b115ead349deb13cbf5a43f23
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:1b24f38bdfd661e26937a14d6ddb7cc1
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:a449e40de3360023c1f39414900fb124
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:555ea86cb0cf881219ebf93c4aec37e1
Supplier Device Package:9e1e464903246f4e16866150754186c5
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BYV26E-TAP
BYV26E-TAP
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1000V 1A SOD57
PMEG2010ET,215
PMEG2010ET,215
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A TO236AB
FR2B_R1_00001
FR2B_R1_00001
Panjit International Inc.
SURFACE MOUNT FAST RECOVERY RECT
ES1JWF-HF
ES1JWF-HF
Comchip Technology
RECTIFIER SUPER FAST RECOVERY 60
JANTXV1N4148UBCCCP
JANTXV1N4148UBCCCP
Microchip Technology
SIGNAL OR COMPUTER DIODE
JANS1N5301UR-1/TR
JANS1N5301UR-1/TR
Microchip Technology
CURRENT REGULATOR
SKL36-AQ
SKL36-AQ
Diotec Semiconductor
SchottkyD, 60V, 3A
BYD13JGPHE3/73
BYD13JGPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
S4PMHM3/86A
S4PMHM3/86A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 4A TO277A
RSFAL MQG
RSFAL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
MBRF5100HC0G
MBRF5100HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 5A ITO220AC
D690S24TXPSA1
D690S24TXPSA1
Infineon Technologies
DIODE GEN PURP 2.4KV 690A
Вас также может заинтересовать
SMF33A-HE3-08
SMF33A-HE3-08
Vishay General Semiconductor - Diodes Division
TVS DIODE 33VWM 53.3VC DO219AB
SMB10J30AHM3_A/H
SMB10J30AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 30VWM 48.4VC DO214AA
BZW04P10B-E3/54
BZW04P10B-E3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO204AL
SM6T6V8AHE3/5B
SM6T6V8AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
1N6286A-E3/51
1N6286A-E3/51
Vishay General Semiconductor - Diodes Division
TVS DIODE 36.8VWM 59.3VC 1.5KE
VS-30ETU12-M3
VS-30ETU12-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 30A TO220AC
31GF6-M3/73
31GF6-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
VS-8ETX06STRR-M3
VS-8ETX06STRR-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO263AB
UGF5JT-E3/45
UGF5JT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 5A ITO220AC
1N5232B-TAP
1N5232B-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 500MW DO35
BZX55F2V4-TAP
BZX55F2V4-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 500MW DO35
VS-GB75LP120N
VS-GB75LP120N
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 170A INT-A-PAK