VS-10ETF12S-M3

VS-10ETF12S-M3

Images are for reference only
See Product Specifications

VS-10ETF12S-M3
Описание:
DIODE GEN PURP 1.2KV 10A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
VS-10ETF12S-M3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:VS-10ETF12S-M3
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):600f6857f966a3ecb5ca3022150669c1
Voltage - Forward (Vf) (Max) @ If:1faff667abd6f558e643bb8177941e29
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):18f26350880e6db3f0cee894a032f0df
Current - Reverse Leakage @ Vr:65a4c56a3d7892838547d1d833e603a1
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:99446f4470b43888d0c78d7d2cdfc956
Supplier Device Package:c1651030b5e959c4697991550f73f503
Operating Temperature - Junction:628c93cb578f4289de8fa3e2e2431cc2
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
SBR02M30LP-7
SBR02M30LP-7
Diodes Incorporated
DIODE SBR 30V 200MA 2DFN
MSE1PJ-M3/89A
MSE1PJ-M3/89A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A MICROSMP
GE1304
GE1304
Harris Corporation
RECTIFIER DIODE, 6A, 200V
HSD119-NKRF-E
HSD119-NKRF-E
Renesas Electronics America Inc
DIODE FOR HIGH SPEED SWITCHING
GSD2004W-HE3-18
GSD2004W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 240V 225MA SOD123
RM 1ZV1
RM 1ZV1
Sanken
DIODE GEN PURP 200V 1A AXIAL
VS-25ETS12S-M3
VS-25ETS12S-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 25A TO263AB
S25GR
S25GR
GeneSiC Semiconductor
DIODE GEN PURP 400V 25A DO220AA
S21140
S21140
Microchip Technology
RECTIFIER
R6010230XXYA
R6010230XXYA
Powerex Inc.
RECTIFIER STUD MOUNT REVERSE DO-
RU 4B
RU 4B
Sanken
DIODE GEN PURP 800V 1.5A AXIAL
HS1JL R3G
HS1JL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
Вас также может заинтересовать
BZW04-31BHE3/73
BZW04-31BHE3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO204AL
VTVS5V0GSMF-HM3-18
VTVS5V0GSMF-HM3-18
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 8.9VC DO219AB
BZW04-342B-E3/73
BZW04-342B-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 342VWM 548VC DO204AL
P6KE20C-E3/73
P6KE20C-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 16.2VWM 29.1VC DO204AC
P6KE11CHE3/54
P6KE11CHE3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 8.92VWM 16.2VC DO204AC
P4SMA100CAHM3/H
P4SMA100CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AC
VS-15EVU06-M3/I
VS-15EVU06-M3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE 600V SLIMDPAK
VS-E4PH3006LHN3
VS-E4PH3006LHN3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 30A TO247AD
BYT53G-TR
BYT53G-TR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 1.9A SOD57
MMSZ5262C-HE3-08
MMSZ5262C-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 500MW SOD123
SML4757HE3_A/H
SML4757HE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 1W DO214AC
VS-P105KW
VS-P105KW
Vishay General Semiconductor - Diodes Division
SCR HY-BRIDGE 1200V 25A PACE-PAK