VS-1EFU06-M3/I

VS-1EFU06-M3/I

Images are for reference only
See Product Specifications

VS-1EFU06-M3/I
Описание:
DIODE GEN PURP 600V 1A DO219AB
Упаковка:
Tape & Reel (TR)
Datasheet:
VS-1EFU06-M3/I Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:VS-1EFU06-M3/I
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:f03f39ff8ceca4763d1520cdfb28b301
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):ab3bac15fcaade6dccea7c8d8143a268
Current - Reverse Leakage @ Vr:72b4176b05723fce26d1e3c7b53a6320
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:d1f1d2deb5140ad12942a071381f1ecd
Supplier Device Package:14e4233bf260ed940e2c2faa18cfbb5c
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 19172
Stock:
19172 Can Ship Immediately
  • Делиться:
Для использования с
S1KFSHMWG
S1KFSHMWG
Taiwan Semiconductor Corporation
DIODE, 1A, 800V, AEC-Q101, SOD-1
1N5394BULK
1N5394BULK
EIC SEMICONDUCTOR INC.
ZENER 5W, CASE TYPE: DO-15
UGF8JT-E3/45
UGF8JT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A ITO220AC
NRVTSM245ET1G
NRVTSM245ET1G
onsemi
DIODE SCHOTTKY 45V 2A POWERMITE
RS1JFS
RS1JFS
Taiwan Semiconductor Corporation
DIODE, FAST, 1A, 600V
FR604GP-TP
FR604GP-TP
Micro Commercial Co
DIODE GPP FAST 6A R-6
C6D06065Q-TR
C6D06065Q-TR
Wolfspeed, Inc.
6A 650V SIC SCHOTTKY QFN
MNS1N5806US/TR
MNS1N5806US/TR
Microchip Technology
MNS1N5806US/TR
SR505 R0G
SR505 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 5A DO201AD
JANS1N6663US/TR
JANS1N6663US/TR
Microchip Technology
STD RECTIFIER
RFV5BM6STL
RFV5BM6STL
Rohm Semiconductor
RFV5BM6S IS SUPER FAST RECOVERY
RB511VM-30FHTE-17
RB511VM-30FHTE-17
Rohm Semiconductor
RB511VM-30FH IS SUPER LOW V
Вас также может заинтересовать
1.5KE150CA-E3/54
1.5KE150CA-E3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC 1.5KE
SMAJ15CAHM3_A/H
SMAJ15CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15VWM 24.4VC DO214AC
1.5KE33-E3/54
1.5KE33-E3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 26.8VWM 47.7VC 1.5KE
1.5SMC110CAHE3_A/H
1.5SMC110CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 94VWM 152VC SMC
SM6T200AHM3/H
SM6T200AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AA
V20100SG-E3/4W
V20100SG-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 20A TO220AB
S1PG-M3/85A
S1PG-M3/85A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO220AA
SS23HM3_A/H
SS23HM3_A/H
Vishay General Semiconductor - Diodes Division
2A 30V SM SCHOTTKY RECT SMB
VI40100GHM3/4W
VI40100GHM3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 20A TO262AA
MMSZ4707-G3-18
MMSZ4707-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 20V 500MW SOD123
BZX85C2V7-TR
BZX85C2V7-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.7V 1.3W DO41
50MT060WH
50MT060WH
Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 114A 658W 12MTP