VS-1N3673A

VS-1N3673A

Images are for reference only
See Product Specifications

VS-1N3673A
Описание:
DIODE GEN PURP 1KV 12A DO203AA
Упаковка:
Bulk
Datasheet:
VS-1N3673A Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:VS-1N3673A
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Average Rectified (Io):0b85066ca7fc96c0d9083cec9ee69087
Voltage - Forward (Vf) (Max) @ If:21852ce2e61ad6d1aeac3a8ef20b273e
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:c0e8055a264eab6aa5e0f7d8e334c627
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:aa594d7c7815385a1dd9ed9fbbb2d316
Package / Case:fb80c0eb7ed9981e55854ca87e313d55
Supplier Device Package:af1e5540f196cd39d2cf41db23132c03
Operating Temperature - Junction:44a2efaf4eb6bc5039d348282682bdda
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
PMEG2005AELD,315
PMEG2005AELD,315
Nexperia USA Inc.
DIODE SCHOTTKY 20V 500MA SOD882D
V15P10HM3/I
V15P10HM3/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 15A TO277A
UPR10/TR7
UPR10/TR7
Microchip Technology
DIODE GEN PURP 100V 2.5A DO216
1N5551US
1N5551US
Microchip Technology
DIODE GEN PURP 400V 3A D5B
MBR6035
MBR6035
GeneSiC Semiconductor
DIODE SCHOTTKY 35V 60A DO5
1N4149_T50R
1N4149_T50R
onsemi
DIODE GEN PURP 100V 500MA DO35
VS-8EWS12STRPBF
VS-8EWS12STRPBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 8A DPAK
JAN1N6761UR-1
JAN1N6761UR-1
Microchip Technology
DIODE SCHOTTKY 100V 1A DO213AB
B360-13-G
B360-13-G
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMC
SS320HM6G
SS320HM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
SR302HA0G
SR302HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 3A DO201AD
HS3G R6G
HS3G R6G
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
Вас также может заинтересовать
SMCG28CA-E3/9AT
SMCG28CA-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 28VWM 45.4VC DO215AB
SM8S14ATHE3/I
SM8S14ATHE3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 14VWM 23.2VC DO218AC
SM8S11-E3/2D
SM8S11-E3/2D
Vishay General Semiconductor - Diodes Division
TVS DIODE 11VWM 20.1VC DO218AB
SMCJ18CHE3/9AT
SMCJ18CHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 18VWM 32.2VC DO214AB
TPSMP15AHM3/85A
TPSMP15AHM3/85A
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO220AA
SMAJ15CAHM3/I
SMAJ15CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15VWM 24.4VC DO214AC
110MT160KB
110MT160KB
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 3P 1.6KV 110A MTK
RS3J-E3/9AT
RS3J-E3/9AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO214AB
BYM11-200HE3/96
BYM11-200HE3/96
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO213AB
GP10DHE3/54
GP10DHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
BZD27C91P-HE3-18
BZD27C91P-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 91V 800MW DO219AB
BZD27C51P-M3-18
BZD27C51P-M3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 800MW DO219AB