VS-30ETH06-N3

VS-30ETH06-N3

Images are for reference only
See Product Specifications

VS-30ETH06-N3
Описание:
DIODE GEN PURP 600V 30A TO220AC
Упаковка:
Tube
Datasheet:
VS-30ETH06-N3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:VS-30ETH06-N3
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):226216c7da4bd5e6411f35000f195944
Voltage - Forward (Vf) (Max) @ If:9789889dfc6eb69e5d67cfef457abf77
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):d721730d2b408eca58ce34c97ef24f87
Current - Reverse Leakage @ Vr:0fec9285459275a66049c25c9db4c1d8
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAT54LPS-7
BAT54LPS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA 2DFN
RS1KLW RVG
RS1KLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SOD123W
SS23MHRSG
SS23MHRSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 2A MICRO SMA
SBRD8835LT4G-VF01
SBRD8835LT4G-VF01
onsemi
DIODE SCHOTTKY 35V 8A DPAK
ES1DH
ES1DH
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
SE40PJ-M3/87A
SE40PJ-M3/87A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2.4A TO277A
JANTXV1N6666
JANTXV1N6666
Microchip Technology
UFR,FRR
MMSD914T3
MMSD914T3
onsemi
DIODE GEN PURP 100V 200MA SOD123
1N4005E-E3/73
1N4005E-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
VS-50WQ04FNTRLPBF
VS-50WQ04FNTRLPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 5.5A DPAK
S5J R6G
S5J R6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
SF43GH
SF43GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 4A DO201AD
Вас также может заинтересовать
P4SMA220A-M3/5A
P4SMA220A-M3/5A
Vishay General Semiconductor - Diodes Division
TVS DIODE 185VWM 328VC DO214AC
1.5KE51HE3/73
1.5KE51HE3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 41.3VWM 73.5VC 1.5KE
LCE16A-E3/73
LCE16A-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 16VWM 26VC 1.5KE
GBU8D-E3/45
GBU8D-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 200V 3.9A GBU
VS-300U60A
VS-300U60A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 300A DO205AB
VSS8D5M12HM3/I
VSS8D5M12HM3/I
Vishay General Semiconductor - Diodes Division
5A, 120V, SLIMSMAW TRENCH SKY
NSB8GTHE3_B/P
NSB8GTHE3_B/P
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 8A TO263AB
VS-STT250M14MPBF
VS-STT250M14MPBF
Vishay General Semiconductor - Diodes Division
MODULE DIODE MAP COMPRESSED
AZ23B39-E3-08
AZ23B39-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23
1N5254C-TR
1N5254C-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 500MW DO35
BZD17C39P-E3-18
BZD17C39P-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 800MW DO219AB
VS-ST083S12MFK0L
VS-ST083S12MFK0L
Vishay General Semiconductor - Diodes Division
SCR 1.2KV 135A TO209AC