VS-65APS12L-M3

VS-65APS12L-M3

Images are for reference only
See Product Specifications

VS-65APS12L-M3
Описание:
RECTIFIER DIODE 65A 1200V TO-247
Упаковка:
Tube
Datasheet:
VS-65APS12L-M3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:VS-65APS12L-M3
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):e0f888687836d50845632884a336d448
Voltage - Forward (Vf) (Max) @ If:91fe2f7b54f72bc5ef27bd0f32dc9a77
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:65a4c56a3d7892838547d1d833e603a1
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:748a8539a6c3c7dbdb455218c72fac40
Supplier Device Package:2b9645c3fe0ecc7924b8d2e3583240ee
Operating Temperature - Junction:628c93cb578f4289de8fa3e2e2431cc2
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
NTE5802
NTE5802
NTE Electronics, Inc
R-200 PRV 3A AXIAL LEAD
FFSD0865B
FFSD0865B
onsemi
650V 8A SIC SBD GEN1.5
BAS19W RVG
BAS19W RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 200MA SOT323
1N5196
1N5196
Microchip Technology
DIODE GEN PURP 225V 200MA DO35
1N5186US
1N5186US
Microchip Technology
DIODE GEN PURP 100V 3A AXIAL
VS-72HF60
VS-72HF60
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 70A DO203AB
JANTX1N6622/TR
JANTX1N6622/TR
Microchip Technology
RECTIFIER UFR,FRR
JANTX1N1190
JANTX1N1190
Microchip Technology
DIODE GEN PURP 600V 35A DO5
1N1586R
1N1586R
Solid State Inc.
DO4 16 AMP SILICON RECTIFIER
VS-1N3882R
VS-1N3882R
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 6A DO203AA
CLS02(TE16L,SQC,Q)
CLS02(TE16L,SQC,Q)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 10A L-FLAT
HERAF805G C0G
HERAF805G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A ITO220AC
Вас также может заинтересовать
SMAJ8.0A-E3/5A
SMAJ8.0A-E3/5A
Vishay General Semiconductor - Diodes Division
TVS DIODE 8VWM 13.6VC DO214AC
SMPC26A-M3/87A
SMPC26A-M3/87A
Vishay General Semiconductor - Diodes Division
TVS DIODE 26VWM 42.1VC TO277A
TPSMB27A61HE3J/5BT
TPSMB27A61HE3J/5BT
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC DO214AA
MBR2060CTHE3/45
MBR2060CTHE3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 60V TO220AB
1N5403-E3/54
1N5403-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 3A DO201AD
VS-70HFLR40S05M
VS-70HFLR40S05M
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 70A DO203AB
VS-300UR30A
VS-300UR30A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 300A DO205AB
SBYV26CHE3/54
SBYV26CHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
EGF1CHE3/67A
EGF1CHE3/67A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 1A DO214BA
BY254GP-E3/73
BY254GP-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO201AD
BZX84C5V1-G3-08
BZX84C5V1-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 300MW SOT23-3
MMBZ4697-HE3-18
MMBZ4697-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 350MW SOT23-3