Logo Logo
0
Мой запрос предложений
English


VS-8EVH06-M3/I

VS-8EVH06-M3/I

Images are for reference only
See Product Specifications

VS-8EVH06-M3/I
Mfr.:
Описание:
DIODE GEN PURPOSE 600V SLIMDPAK
Упаковка:
Tape & Reel (TR)
Datasheet:
VS-8EVH06-M3/I Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:VS-8EVH06-M3/I
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):aef4533582e3b78f1bc369aaf4ae62ba
Voltage - Forward (Vf) (Max) @ If:12386f3c8962f0fc5cbab0f8ee7e0161
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):a2ae0914ecb8ec833e13c1365b306a6e
Current - Reverse Leakage @ Vr:de15caf3f6007ba64f174375d304a09f
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
Supplier Device Package:e3d0d10fe039d99547eaac7bfcf62a81
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 393
Stock:
393 Can Ship Immediately
  • Делиться:
Для использования с
1N4249
1N4249
NTE Electronics, Inc
R-SI 1000V 1A
MB34_R1_00001
MB34_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
SK16BH
SK16BH
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A DO214AA
MUR4L40
MUR4L40
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO201AD
MBR30100FCTE3/TU
MBR30100FCTE3/TU
Microchip Technology
DIODE SCHOTTKY 30A 100V ITO220AB
JANS1N6640US/TR
JANS1N6640US/TR
Microchip Technology
SWITCHING
W3708MC320
W3708MC320
IXYS
RECTIFIER DIODE
CD216A-B120LLF
CD216A-B120LLF
Bourns Inc.
DIODE SCHOTTKY 20V 1A DO216AA
1N4002-N-2-4-AP
1N4002-N-2-4-AP
Micro Commercial Co
DIODE GEN PURP 100V 1A DO41
GPA806DT-TP
GPA806DT-TP
Micro Commercial Co
DIODE GPP 8A D2PAK
CRG09A,LQ(M
CRG09A,LQ(M
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 1A SFLAT
SR1202H
SR1202H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 12A DO201AD
Вас также может заинтересовать
1.5SMC36AHM3/I
1.5SMC36AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
GBU6A-M3/45
GBU6A-M3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 50V 3.8A GBU
MBRB3045CT-E3/45
MBRB3045CT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO263AB
RGP02-20E-E3/54
RGP02-20E-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 2KV 500MA DO204
SS25-E3/52T
SS25-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 2A DO214AA
VS-MBR1635-M3
VS-MBR1635-M3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 16A 35V TO-220AC
RGP10AHE3/73
RGP10AHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
SS3P6HE3/85A
SS3P6HE3/85A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 3A DO220AA
TZMC75-M-18
TZMC75-M-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 500MW SOD80
MMSZ5227C-HE3-18
MMSZ5227C-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.6V 500MW SOD123
BZD27B20P-E3-08
BZD27B20P-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 20V 800MW DO219AB
BZD27B47P-E3-18
BZD27B47P-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 47V 800MW DO219AB