VS-8EWX06FNTRR-M3

VS-8EWX06FNTRR-M3

Images are for reference only
See Product Specifications

VS-8EWX06FNTRR-M3
Описание:
DIODE GEN PURP 600V 8A D-PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
VS-8EWX06FNTRR-M3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:VS-8EWX06FNTRR-M3
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):aef4533582e3b78f1bc369aaf4ae62ba
Voltage - Forward (Vf) (Max) @ If:32a47252ef5d2cc117f12098c3c13ae6
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):8e10a723d9c9c28c27728aafca4a93b1
Current - Reverse Leakage @ Vr:0fec9285459275a66049c25c9db4c1d8
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
Supplier Device Package:d451cfc219a99288f4998a33a04a4942
Operating Temperature - Junction:628c93cb578f4289de8fa3e2e2431cc2
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
W0944WC150
W0944WC150
IXYS
RECTIFIER DIODE
VS-70HFL80S05
VS-70HFL80S05
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 70A DO203AB
RURD660S
RURD660S
Fairchild Semiconductor
RECTIFIER DIODE
ES1LJH
ES1LJH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AC
BYT52G-TAP
BYT52G-TAP
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 1.4A SOD57
VS-8ETX06STRR-M3
VS-8ETX06STRR-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO263AB
UES1003SM-1
UES1003SM-1
Microchip Technology
UFR,FRR
JANS1N5615US
JANS1N5615US
Microchip Technology
RECTIFIER DIODE
JANS1N5292UR-1/TR
JANS1N5292UR-1/TR
Microchip Technology
CURRENT REGULATOR
RSFAL RQG
RSFAL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
S8MC R6
S8MC R6
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO214AB
RF073M2STR
RF073M2STR
Rohm Semiconductor
DIODE GEN PURP 200V 700MA PMDU
Вас также может заинтересовать
VESD26C1-HD1HG3-08
VESD26C1-HD1HG3-08
Vishay General Semiconductor - Diodes Division
26V;IR=0.1UA;IP=2.1A;P=W;CD=21PF
P6SMB51A-M3/5B
P6SMB51A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 43.6VWM 70.1VC DO214AA
SMB8J16CA-E3/52
SMB8J16CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 16VWM 26VC DO214AA
SMCJ9.0AHE3_A/I
SMCJ9.0AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 9VWM 15.4VC DO214AB
SMBJ10AHM3/H
SMBJ10AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10VWM 17VC DO214AA
GBL08-E3/51
GBL08-E3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 800V 3A GBL
MBRB20H45CT-E3/45
MBRB20H45CT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY TO-263AB
VS-MBRD330TRLPBF
VS-MBRD330TRLPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 3A DPAK
1N4740A-TR
1N4740A-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 1.3W DO41
BZX384C4V3-HE3-18
BZX384C4V3-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 200MW SOD323
ZGL41-190A-E3/97
ZGL41-190A-E3/97
Vishay General Semiconductor - Diodes Division
DIODE ZENER 190V 1W GL41
MMBZ5239C-E3-08
MMBZ5239C-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 9.1V 225MW SOT23-3