VS-FB180SA10P

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Mfr. #:

VS-FB180SA10P

Mfr.:

Vishay General Semiconductor - Diodes Division

Описание:

MOSFET N-CH 100V 180A SOT-227

Упаковка:

Bulk

Datasheet:

VS-FB180SA10P Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	VS-FB180SA10P
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Vishay General Semiconductor - Diodes Division
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	699c7cbda38c65c37939fef53951f120
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	a75e7ffcd3ef4817b4f6b08df838b048
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	6720e84b7794a1db2757ebba51684967
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	b3f2f0a985a3113cf7f050b1b0f22d5a
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	fc7ea30e90755d3e87dd5acda8e6a888
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	678457b2fd6f368ccd41b6654ad866df
Supplier Device Package:	aa5ed6d1c2d9b54d672d410aea209373
Package / Case:	cafcaadef55a90fa9f519d3abd68cad9