VS-FB190SA10

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See Product Specifications

Mfr. #:

VS-FB190SA10

Mfr.:

Vishay General Semiconductor - Diodes Division

Описание:

MOSFET N-CH 100V 190A SOT227

Упаковка:

Tube

Datasheet:

VS-FB190SA10 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	VS-FB190SA10
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Vishay General Semiconductor - Diodes Division
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	7f3f0dce8f85643299d1a0aca4c35ae0
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	a75e7ffcd3ef4817b4f6b08df838b048
Vgs(th) (Max) @ Id:	ca32e4c1014f53f358cfa88c3cb3552d
Gate Charge (Qg) (Max) @ Vgs:	6066af7ce7fae6c50959ccdced693718
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	b3f2f0a985a3113cf7f050b1b0f22d5a
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	dac6ce49e517dfa58b1989f3f381b955
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	678457b2fd6f368ccd41b6654ad866df
Supplier Device Package:	aa5ed6d1c2d9b54d672d410aea209373
Package / Case:	cafcaadef55a90fa9f519d3abd68cad9