VS-GB100TP120N

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See Product Specifications

Mfr. #:

VS-GB100TP120N

Mfr.:

Vishay General Semiconductor - Diodes Division

Описание:

IGBT MOD 1200V 200A INT-A-PAK

Упаковка:

Bulk

Datasheet:

VS-GB100TP120N Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	VS-GB100TP120N
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Modules
Производитель:	Vishay General Semiconductor - Diodes Division
Упаковка:	Bulk
Product Status:	ec30c235d0eb792797af1aa1d11759a7
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Configuration:	0e519aa66424d7388ab5f73741de20e8
Voltage - Collector Emitter Breakdown (Max):	edca1d2343e4e5615ce51a879f622a76
Current - Collector (Ic) (Max):	63d19bd379a172e83028b5a9b57fac7b
Power - Max:	b230078ecacbc1c0cd75ad3fd6a12ff0
Vce(on) (Max) @ Vge, Ic:	ffcd527b26c023cecc0d6547ce558582
Current - Collector Cutoff (Max):	0791270b73e4d7befa4d41e9866c702c
Input Capacitance (Cies) @ Vce:	116084de2f80e96ab74a828f3c8014e2
Input:	eb6d8ae6f20283755b339c0dc273988b
NTC Thermistor:	bafd7322c6e97d25b6299b5d6fe8920b
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	678457b2fd6f368ccd41b6654ad866df
Package / Case:	06a26fc41181455766c8d6039dffe6a9
Supplier Device Package:	44e2f792f3e68a16f230d555a055f68c