VS-KBPC810

VS-KBPC810

Images are for reference only
See Product Specifications

VS-KBPC810
Описание:
BRIDGE RECTIFIER 1000V 8.0A D-72
Упаковка:
Bulk
Datasheet:
VS-KBPC810 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:VS-KBPC810
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Bridge Rectifiers
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:04d59a4f67a72cfc8a6f8046b91ff693
Technology:eb6d8ae6f20283755b339c0dc273988b
Voltage - Peak Reverse (Max):2077542d305460914d23cc0fdc2b9322
Current - Average Rectified (Io):f8cc56260823e63e891e80728bae51e6
Voltage - Forward (Vf) (Max) @ If:1e2bf95b6dcc7a4f9914283084b88cd6
Current - Reverse Leakage @ Vr:d6b00d64e7844edb2c9218eb85ed0891
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:65db2a0aecc92958630275f8186b25bc
Supplier Device Package:e07126030728eb01022f68b700270322
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
GBU1006
GBU1006
Diodes Incorporated
BRIDGE RECT 1PHASE 600V 10A GBU
GBL06-E3/45
GBL06-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 3A GBL
BR34
BR34
Rectron USA
BRIDGE RECTIFIER 1 PHASE 400V 3A
RDBF252-13
RDBF252-13
Diodes Incorporated
BRIDGE RECTIFIER DBF T&R 3K
GBU2508-G
GBU2508-G
Comchip Technology
BRIDGE RECT 1PHASE 800V 4.2A GBU
MDNA210UB2200PTED
MDNA210UB2200PTED
IXYS
BIPOLARMODULE-RECTIFIER+BRAKE E2
PB2510-B1-3000HF
PB2510-B1-3000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 25A PB
PBPC802
PBPC802
Diodes Incorporated
BRIDGE RECT 1P 100V 6A PBPC-8
GBU1001HD2G
GBU1001HD2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 50V 10A GBU
GBPC3508 T0G
GBPC3508 T0G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 800V 35A GBPC
MSB10M-13
MSB10M-13
Diodes Incorporated
BRIDGE RECT 1PHASE 1KV 1A 4MSB
GBU803H
GBU803H
Taiwan Semiconductor Corporation
DIODE BRIDGE 8A 200V GBU
Вас также может заинтересовать
VESD33C1-HD1HG3-08
VESD33C1-HD1HG3-08
Vishay General Semiconductor - Diodes Division
33V;IR=0.1UA;IP=1.6A;P=W;CD=18PF
TPC39AHM3_A/H
TPC39AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC TO277A
TPSMA9.1AHE3_A/I
TPSMA9.1AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 7.78VWM 13VC DO214AC
P4SMA130AHM3/H
P4SMA130AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 111VWM 179VC DO214AC
HFA15PB60
HFA15PB60
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 15A TO247AC
GP10AE-M3/54
GP10AE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO204AL
AZ23B33-HE3-18
AZ23B33-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 33V 300MW SOT23
MMBZ4622-G3-18
MMBZ4622-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 350MW SOT23-3
MMBZ4693-G3-08
MMBZ4693-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 350MW SOT23-3
VSKT500-14
VSKT500-14
Vishay General Semiconductor - Diodes Division
SCR DBL 2SCR 1400V 500A MAGNAPAK
VS-111RKI80
VS-111RKI80
Vishay General Semiconductor - Diodes Division
SCR 800V 172A TO209AC
VS-GB75SA120UP
VS-GB75SA120UP
Vishay General Semiconductor - Diodes Division
IGBT MODULE 1200V 658W SOT227