IRFBE30STRL

IRFBE30STRL

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IRFBE30STRL
Описание:
MOSFET N-CH 800V 4.1A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
IRFBE30STRL Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IRFBE30STRL
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:c94d653982be52e80718b3875fd56aee
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:9af2e04964c3e4b089ebca2390ee6772
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:a5ebbc4a8812eff6b41b832a37b12282
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:d7564c04d9acd1725db5fd5dcf8ed6c7
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9ab21596dbbd1fdf7a3f4aba0a4832ee
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:bf4aa032e4c992412ea226c67524cac7
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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