SI2319DS-T1-GE3

SI2319DS-T1-GE3

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SI2319DS-T1-GE3
Описание:
MOSFET P-CH 40V 2.3A SOT23-3
Упаковка:
Tape & Reel (TR)
Datasheet:
SI2319DS-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI2319DS-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:f61661d642430f47521967b9829f5bfd
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:042e61c926f80bff1c652cb7e3e34818
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:988fe98cb9f26fb087a3d0d542dc4408
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:d5c728b03f661a6589566ed57defc8c2
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ba83a644cec4c1bfa2521ee340121387
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:86ee1c19077e759cc02645e69bcd58b2
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 0
Stock:
0 Can Ship Immediately
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