SI2351DS-T1-GE3

SI2351DS-T1-GE3

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SI2351DS-T1-GE3
Описание:
MOSFET P-CH 20V 2.8A SOT23-3
Упаковка:
Cut Tape (CT)
Datasheet:
SI2351DS-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI2351DS-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Cut Tape (CT)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:bb044b06983324914fcb85c551ec82af
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:85fa72e822fc0e70718b0efb15c12634
Vgs(th) (Max) @ Id:f710eedc1bf5fdb1a1e1a08d92eb0502
Gate Charge (Qg) (Max) @ Vgs:44f66e5588216995425eb504e7394878
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:68e53f5dccd2354c0239ebaf3f11c578
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:86ee1c19077e759cc02645e69bcd58b2
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 0
Stock:
0 Can Ship Immediately
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