SI3493DDV-T1-GE3

SI3493DDV-T1-GE3

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SI3493DDV-T1-GE3
Описание:
MOSFET P-CHANNEL 20V 8A 6TSOP
Упаковка:
Tape & Reel (TR)
Datasheet:
SI3493DDV-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI3493DDV-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:c5fa82be9d4940e3e38692b9b3188d78
Drive Voltage (Max Rds On, Min Rds On):72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:6f0b932d9e4644385935b4aa15150f54
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:f4e74098a8b6a3227c3e07422d942603
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:c25221b6e508700d9b9682f43dbd86d3
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):1587c38f25892e0295bc0b064861f1b6
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:3e6b96391caa3c5529c8a77c2a1613ae
Package / Case:0be095bf904b063006f66328288b68f9
In Stock: 0
Stock:
0 Can Ship Immediately
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