SI3499DV-T1-GE3

SI3499DV-T1-GE3

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SI3499DV-T1-GE3
Описание:
MOSFET P-CH 8V 5.3A 6TSOP
Упаковка:
Tape & Reel (TR)
Datasheet:
SI3499DV-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI3499DV-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):7d3364268c2b8854793e00b793cae274
Current - Continuous Drain (Id) @ 25°C:cef7d2862d88f8b2894028934d27661d
Drive Voltage (Max Rds On, Min Rds On):c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:103876b9b2a3dca0fec21991ee393787
Vgs(th) (Max) @ Id:0371f76ae2b5186448de406b09793645
Gate Charge (Qg) (Max) @ Vgs:e2a8417acfae242e13d2e8feb1603259
Vgs (Max):051eb3694b8dd0dc96802e319d53b81e
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):14bc6fd10804736682cebd162892b3e7
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:3e6b96391caa3c5529c8a77c2a1613ae
Package / Case:0be095bf904b063006f66328288b68f9
In Stock: 6387
Stock:
6387 Can Ship Immediately
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