SI4058DY-T1-GE3

SI4058DY-T1-GE3

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SI4058DY-T1-GE3
Описание:
MOSFET N-CH 100V 10.3A 8SOIC
Упаковка:
Tape & Reel (TR)
Datasheet:
SI4058DY-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI4058DY-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:d01df1d10bffa2abac2b9cf11289bdc0
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:9f59dd6165018f8f70ed571f2235313c
Vgs(th) (Max) @ Id:8fe7610677dc5fce7875270a0a1100b7
Gate Charge (Qg) (Max) @ Vgs:b6c2223d9fea96566cb6abb13712652f
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:02bbae4d5513a034ef18b8329a3a0fa4
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):bc271554433f2f50becd68b62046c881
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:f540a82a31d84dfe2e0dd06b324c8a8f
Package / Case:f80d2dd5409d1e9f8a546eb6d6a8728d
In Stock: 0
Stock:
0 Can Ship Immediately
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