SI4108DY-T1-GE3

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See Product Specifications

Mfr. #:

SI4108DY-T1-GE3

Mfr.:

Vishay Siliconix

Описание:

MOSFET N-CH 75V 20.5A 8-SOIC

Упаковка:

Cut Tape (CT)

Datasheet:

SI4108DY-T1-GE3 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SI4108DY-T1-GE3
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Vishay Siliconix
Упаковка:	Cut Tape (CT)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	127321faf7ab6033447f8457edc41d44
Current - Continuous Drain (Id) @ 25°C:	6009930714000705dcb2cca780f2234a
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	dde3749d120464e3a83bdecbb596cb9f
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	64ee8dd5f85654f637492b50eb905c25
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	82cc98cb8c14449da94c8e4b98934283
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	f540a82a31d84dfe2e0dd06b324c8a8f
Package / Case:	f80d2dd5409d1e9f8a546eb6d6a8728d